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TC7MET138AFK Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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TC7MET138AFK Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TC7MET138AFK 2001-09-12 4 Recommended Operating Conditions Characteristics Symbol Rating Unit Supply voltage VCC 4.5~5.5 V Input voltage VIN 0~5.5 V 0~5.5 (Note4) Output voltage VOUT 0~VCC (Note5) V Operating temperature Topr −40~85 °C Input rise and fall time dt/dv 0~20 ns/V Note4: VCC = 0 V Note5: High or low state. Electrical Characteristics DC Characteristics Ta = 25°C Ta = −40~85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit High level VIH 4.5~5.5 2.0 2.0 Input voltage Low level VIL 4.5~5.5 0.8 0.8 V IOH = −50 µA 4.5 4.4 4.5 4.4 High level VOH VIN = VIH or VIL IOH = −8 mA 4.5 3.94 3.80 IOL = 50 µA 4.5 0 0.1 0.1 Output voltage Low level VOL VIN = VIH or VIL IOL = 8 mA 4.5 0.36 0.44 V Input leakage current IIN VIN = 5.5 V or GND 0~5.5 ±0.1 ±1.0 µA ICC VIN = VCC or GND 5.5 4.0 40.0 µA Quiescent supply current ICCT Per input: VIN = 3.4 V Other input: VCC or GND 5.5 1.35 1.50 mA Output leakage current IOPD VOUT = 5.5 V 0 0.5 5.0 µA AC Characteristics (Input: tr = === tf ==== 3 ns) Ta = 25°C Ta = −40~85°C Characteristics Symbol Test Condition VCC (V) CL (pF) Min Typ. Max Min Max Unit 15 7.6 10.4 1.0 12.0 Propagation delay time (A, B, C- Y) tpLH tpHL 5.0 ± 0.5 50 8.1 11.4 1.0 13.0 ns 15 6.6 9.1 1.0 10.5 Propagation delay time (G1- Y) tpLH tpHL 5.0 ± 0.5 50 7.1 10.1 1.0 11.5 ns 15 7.0 9.6 1.0 11.0 Propagation delay time ( 2 G - Y) tpLH tpHL 5.0 ± 0.5 50 7.5 10.6 1.0 12.0 ns Input capacitance CIN 4 10 10 pF Power dissipation capacitance CPD (Note6) 49 pF Note6: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD・VCC・fIN + ICC |
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