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2SK0656 Fiches technique(PDF) 1 Page - Panasonic Semiconductor |
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2SK0656 Fiches technique(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 285 Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching I Features G High-speed switching G Small drive current owing to high input inpedance G High electrostatic breakdown voltage Internal Connection G R1 D S R2 1: Source 2: Drain 3: Gate NS-B1 Package 4.0±0.2 0.75 max. 2.0±0.2 0.45 (2.5) (2.5) 0.7±0.1 23 1 +0.20 –0.10 0.45 +0.20 –0.10 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VOH VOL R1 + R2* 1 Ciss Coss Crss ton* 2 toff* 2 Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100 µA, V DS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200 Ω VDD = 5V, VGS = 5V, RL = 200 Ω VDS = 10V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200 Ω VDD = 5V, VGS = 5 to 0V, RL = 200 Ω *1 Resistance ratio R 1/R2 = 1/50 *2 Pulse measurement min 40 50 1.5 20 4.5 100 typ 35 9 4.5 1.1 Unit µA µA V V Ω mS V V k Ω pF pF pF µs µs max 10 80 3.5 50 1 200 1 1 Note) The part number in the parenthesis shows conventional part number. unit: mm |
Numéro de pièce similaire - 2SK0656 |
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Description similaire - 2SK0656 |
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