Transistors

1

Publication date: December 2002

SJC00281BED

2SC4626J

Silicon NPN epitaxial planar type

For high-frequency amplification

■ Features

• Optimum for RF amplification of FM/AM radios

• High transition frequency f

T

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

30

V

Collector-emitter voltage (Base open)

20

V

Emitter-base voltage (Collector open)

5V

Collector current

30

mA

Collector power dissipation

125

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base cutoff current (Emitter open)

= 10 V, I

E

= 0

0.1

µA

70

220



Transition frequency

150

250

MHz

Noise figure

NF

= 10 V, I

E

= −1 mA, f = 5 MHz

2.8

4.0

dB

Reverse transfer impedance

22

50

Ω

Common-emitter reverse transfer

0.9

1.5

pF

capacitance

■ Electrical Characteristics T

a

= 25°C ± 3°C

Rank

B

C

No-rank

70 to 140

110 to 220

70 to 220

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Unit: mm

Marking Symbol: V

3

12

0.12

+0.03

–0.01

5˚

1.60

+0.05

–0.03

(0.50)(0.50)

1: Base

2: Emitter

3: Collector

EIAJ: SC-89

SSMini3-F1 Package

Product of no-rank is not classified and have no indication for rank.