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2SA1015 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SA1015 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SA1015(L) 2003-03-27 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications · High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) · Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) · Low noise: NF = 0.2dB (typ.) (f = 1 kHz) · Complementary to 2SC1815 (L) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -50 mA Collector power dissipation PC 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 ¾ ¾ -0.1 mA Emitter cut-off current IEBO VEB = -5 V, IC = 0 ¾ ¾ -0.1 mA hFE (1) (Note) VCE = -6 V, IC = -2 mA 70 ¾ 400 DC current gain hFE (2) VCE = -6 V, IC = -150 mA 25 80 ¾ Collector-emitter saturation voltage VCE (sat) IC = -100 mA, IB = -10 mA ¾ -0.1 -0.3 V Base-emitter saturation voltage VBE (sat) IC = -100 mA, IB = -10 mA ¾ ¾ -1.1 V Transition frequency fT VCE = -10 V, IC = -1 mA 80 ¾ ¾ MHz Collector output capacitance Cob VCB = -10 V, IE = 0 f = 1 MHz ¾ 4 7 pF Base intrinsic resistance rbb’ VCB = -10 V, IE = 1 mA f = 30 MHz ¾ 30 ¾ W NF (1) VCE = -6 V, IC = -0.1 mA f = 100 Hz, RG = 10 kW ¾ 0.5 6 Noise figure NF (2) VCE = -6 V, IC = -0.1 mA f = 1 kHz, RG = 10 kW ¾ 0.2 3 dB Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
Numéro de pièce similaire - 2SA1015 |
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Description similaire - 2SA1015 |
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