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TLP270D Fiches technique(PDF) 6 Page - Toshiba Semiconductor

No de pièce TLP270D
Description  TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET / Photo-Transistor
Download  8 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP270D Fiches technique(HTML) 6 Page - Toshiba Semiconductor

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TLP270D
2002-09-25
6
Darlington Transistor
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector
-base voltage
VCBO
30
V
Collector
-emitter voltage
VCEO
30
V
Emitter
-base voltage
VEBO
10
V
Collector current
IC
0.15
A
Base current
IB
20
mA
Collector power dissipation
PC
350
mW
Junction temperature
Tj
125
°C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector off current
ICBO
VCB=30V, IE=0
―
―
10
mA
Emitter off current
IEBO
VEB=10V, IC=0
―
―
10
mA
Collector
-emitter breakdown
voltage
V(BR)CEO
IC=10mA, IB=0
30
―
―
V
DC current gain
hFE
VCE=2V, IC=150mA
4000
―
―
Collector
-emitter saturation
voltage
VCE(sat)
IC=0.15A, IB=1mA
―
―
1.5
V
Turn
-on time
ton
―
0.20
―
Storage time
tstg
―
0.6
―
Switching
time
Fall time
tf
IB=1mA, VCC=15V,
RL=15W
―
0.3
―
ms
Bridge Rectifier
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average output rectified current
IO
0.15
A
Peak one cycle surge forward
current
IFSM
0.5
A
Junction temperature
Tj
125
°C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VFM
IFM=0.12A
―
―
1.7
V
Repetitive peak reverse
current
IRRM
VRRM=rated
―
―
10
mA


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