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TC55NEM216AFTN70 Fiches technique(PDF) 8 Page - Toshiba Semiconductor |
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TC55NEM216AFTN70 Fiches technique(HTML) 8 Page - Toshiba Semiconductor |
8 / 11 page TC55NEM216AFTN55,70 2002-07-04 8/11 Note: (1) R/W remains HIGH for the read cycle. (2) If CE (or UB or LB ) goes LOW coincident with or after R/W goes LOW, the outputs will remain at high impedance. (3) If CE (or UB or LB ) goes HIGH coincident with or before R/W goes HIGH, the outputs will remain at high impedance. (4) If OE is HIGH during the write cycle, the outputs will remain at high impedance. (5) Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied. DATA RETENTION CHARACTERISTICS (Ta ==== −−−−40° to 85°C) SYMBOL PARAMETER MIN TYP MAX UNIT VDH Data Retention Supply Voltage 2.0 5.5 V Ta = −40~40°C 3 IDDS2 Standby Current Ta = −40~85°C 20 µA tCDR Chip Deselect to Data Retention Mode Time 0 ns tR Recovery Time 5 ms CONTROLLED DATA RETENTION MODE , CONTROLLED DATA RETENTION MODE (See Note 2) CE UB LB VDD 4.5 V GND VIH DATA RETENTION MODE tR (See Note 3) (See Note 3) tCDR VDD VDD − 0.2 V UB , LB VDD 4.5 V GND VIH DATA RETENTION MODE tR (See Note 1) (See Note 1) tCDR VDD VDD − 0.2 V CE |
Numéro de pièce similaire - TC55NEM216AFTN70 |
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Description similaire - TC55NEM216AFTN70 |
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