KMM366S1623DTL-GO datasheet(1/10 Pages) SAMSUNG

No de pièce	KMM366S1623DTL-GO

Description	PC66 Unbuffered DIMM

Download	10 Pages

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Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

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PC66 Unbuffered DIMM

KMM366S1623DTL

REV. 0.0 July 1999

Revision History

Revision 0.0(July 7, 1999)

• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.

• Skip ICC4 value of CL=2 in DC characteristics in datasheet.

• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.

• Symbol Change Notice

Before

After

IIL

Input leakage current (inputs)

ILI

Input leakage current

IIL

Input leakage current (I/O pins)

IOL

Output open @ DC characteristic table

Io

Output open @ DC characteristic table

•

Test Condition in DC CHARACTERISTIC Change Notice

Symbol

Before

After

ICC2P , ICC3P

CKE

≤ VIL(max), tCC = 15ns

CKE

≤ VIL(max), tCC = 10ns

ICC2N , ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 15ns

Input signals are changed one time during 30ns

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC4

2 Banks activated

4 Banks activated

• Added Notes @OPERATING AC PARAMETER

Notes : 5. For -0, tRDL=1CLK and tDAL=1CLK+20ns is also supported .

SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.

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Samsung semiconductor	KMM366S1623AT	810Kb / 12P	16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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	KMM366S1623AT-G8	810Kb / 12P	16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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