KMM366S1623DTL-G0 datasheet(6/10 Pages) SAMSUNG

No de pièce	KMM366S1623DTL-G0

Description	PC66 Unbuffered DIMM

Download	10 Pages

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Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

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6 / 10 page

PC66 Unbuffered DIMM

KMM366S1623DTL

REV. 0.0 July 1999

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C)

Parameter

Symbol

Test Condition

Version

Unit

Note

-0

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

760

mA

1

Precharge standby current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

16

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

16

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

240

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

96

Active standby current in

power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

48

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

48

Active standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

400

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

240

mA

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4Banks activated

tCCD = 2CLKs

960

mA

1

Refresh current

ICC5

tRC

≥ tRC(min)

1,200

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

16

mA

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)

Notes :

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Samsung semiconductor	KMM366S1623AT	810Kb / 12P	16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
	KMM366S1623AT-G0	810Kb / 12P	16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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	KMM366S1623AT-G8	810Kb / 12P	16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
	KMM366S1623BT	527Kb / 11P	PC100 SDRAM MODULE

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KMM366S1623DTL-G0 Fiches technique(PDF) 6 Page - Samsung semiconductor

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