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STGD5NB120SZT4 Fiches technique(PDF) 3 Page - STMicroelectronics |
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STGD5NB120SZT4 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 13 page 3/13 STGD5NB120SZ-1 - STGD5NB120SZ ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic (1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5% Table 7: Switching On Table 8: Switching Off Table 9: Switching Energy (2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. (3) Turn-off losses include also the tail of the collector current. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VCE = 25 V , IC = 5 A 5S Cies(*) Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0V 430 pF Coes(*) Output Capacitance 40 pF Cres(*) Reverse Transfer Capacitance 7pF Rg Gate Resistance 4 K Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Delay Time Current Rise Time Turn-on Current Slope IC = 5 A , VCC = 960 V VGE = 15 V , Rdrive =1KΩ Tj = 25°C 690 170 39.6 ns ns A/µs td(on) tr (di/dt)on Dealy Time Current Rise Time Turn-on Current Slope ICC = 5 A , VCC = 960 V VGE = 15 V , Rdrive =1KΩ Tj = 125°C 600 185 39 ns ns A/µs Symbol Parameter Test Conditions Min. Typ. Max. Unit tc tr(Voff) td(off) tf Cross-over Time Off Voltage Rise Time Delay Time Current Fall Time IC = 5 A , VCC = 960 V VGE = 15 V , Rdrive =1KΩ Tj = 25°C 4 2.2 12.1 1.13 µs µs µs µs tc tr(Voff) td(off) tf Cross-over Time Off Voltage Rise Time Delay Time Current Fall Time IC = 5 A , VCC = 960 V VGE = 15 V , Rdrive =1KΩ Tj = 125°C 5 2.2 12.1 2 µs µs µs µs Symbol Parameterr Test Conditions Min. Typ. Max Unit Eon (2) Eoff (3) Ets Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 25°C (see Figure 18) 2.59 9 11.59 mJ mJ mJ Eon (2) Eoff (3) Ets Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 18) 2.64 10.2 12.68 mJ mJ mJ |
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