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SSW-308 Datasheet(Fiches technique) 1 Page - Stanford Microdevices

Numéro de pièce SSW-308
Description  DC-3 GHz Low Cost GaAs MMIC SPDT Switch
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Fabricant  STANFORD [Stanford Microdevices]
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Product Description
SSW-308
DC-3 GHz Low Cost
GaAs MMIC SPDT Switch
Product Features
Fast Switching Speed : 3nsec
HIgh LInearity : +47dBm IP3
Ultra Low DC Power Consumption
Low Insertion Loss : 0.7dB at 1GHz
Low Cost Small Outline Plastic Package
Applications
Digital Cellular
Spread Spectrum
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Stanford Microdevices’ SSW-308 is a high perfomance
Gallium Arsenide Field Effect Transistor MMIC switch housed
in a low-cost surface-mountable small outline plastic
package.
This single-pole, double-throw, reflective switch consumes
less than 40uA and operates with 0V/-5V control voltages.
This switch can be used in both analog and digital wireless
communication systems including AMPS, PCS, DECT, and
GSM.
Typical output power at 1dB compression is +28dBm. 1dB
output power over 1 watt may be achieved with higher
control voltages.
The die is fabricated using 0.5 micron FET process with gold
metallization and silicon nitride passivation to achieve
excellent performance and reliability.
S y m bol
P a r a m e t e r s : T e s t C ondi t i ons :
Z
0
= 50 o h m s
Un i t s
Mi n .
Ty p .
M ax.
In s
Ins er tion Lo s s
f = 0.05- 1 .0G H z
f = 1.00- 2 .0G H z
f = 1.00- 3 .0G H z
dB
dB
dB
0.6
0.9
1.2
0.9
1.3
Is ol
Is olatio n
f = 0.05- 1 .0G H z
f = 1.00- 2 .0G H z
f = 1.00- 3 .0G H z
dB
dB
dB
20
17
25
22
16
V S W R o n
Input & O u tp ut V S W R
( low lo s s s tate)
f = 0.05- 1 .0G H z
f = 1.00- 2 .0G H z
f = 1.00- 3 .0G H z
-
-
-
1.2:1
1.4:1
1.7:1
P
1dB
1dB C o m p r e s s ion a t 0.5- 2.0G H z
V = - 8 V
V = - 5 V
dB m
dB m
+3 1
+2 8
IP
3
T h ir d O r der In te r c ep t
V = - 8 V
V = - 5 V
dB m
dB m
+5 0
+4 7
I
D
D e v ic e C u r r ent
uA
35
Is w
S w itc hing S peed 5 0 % c ontr o l to
10% /90% R F
ns ec
3
Electrical Specifications at Ta = 25C
Isolation vs. Frequency
VControl = -5 V
GHz
dB
-50
-40
-30
-20
-10
DC
1
2
3
7-21




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Numéro de composants électroniques

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