2SK3556-01S datasheet(4/4 Pages) FUJI

No de pièce	2SK3556-01S

Description	N-CHANNEL SILICON POWER MOSFET

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Fabricant	FUJI [Fuji Electric]

Site Internet	http://www.fujielectric.co.jp/eng/fdt/scd

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4 / 4 page

4

2SK3556-01L,S,SJ

FUJI POWER MOSFET

PRE-SOLDER

See Note: 1.

Trademark

Lot No.

Type name

Note: 1. Guaranteed mark of avalanche ruggedness.

CONNECTION

GATE

DRAIN

SOURCE

DIMENSIONS ARE IN MILLIMETERS.

FUJI POWER MOS FET

12

3

1

2

3

Outline Drawings (mm)

Type(L)

GATE

DRAIN

SOURCE

See Note: 1.

Trademark

Lot No.

DIMENSIONS ARE IN MILLIMETERS.

Type name

FUJI POWER MOS FET

CONNECTION

Notes

1. ( ) : Reference dimensions.

Note: 1. Guaranteed mark of

avalanche ruggedness.

2. The metal part is covered with

the solder plating, part of cutting

is without the solder plating.

Pre-Solder

Fig. 1.

OUT VIEW

Solder Plating

4

1

2

4

3

Type(S)

GATE

DRAIN

SOURCE

See Note: 1.

Trademark

Lot No.

Type name

FUJI POWER MOS FET

CONNECTION

Notes

1. ( ) : Reference dimensions.

Note: 1. Guaranteed mark of

avalanche ruggedness.

2. The metal part is covered with

the solder plating, part of cutting

is without the solder plating.

OUT VIEW

Fig. 1.

Solder Plating

Pre-Solder

DIMENSIONS ARE IN MILLIMETERS.

2

4

1

3

Type(SJ)

IAV=f(tAV):starting Tch=25°C. Vcc=48V

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-2

10

-1

10

0

10

1

10

2

Single Pulse

Maximum Avalanche Current Pulsewidth

t

AV

[sec]

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

-3

10

-2

10

-1

10

0

10

1

Transient Thermal Impedance

Zth(ch-c)=f(t):D=0

t [sec]

Numéro de pièce similaire - 2SK3556-01S

Fabricant	No de pièce	Fiches technique	Description
Fuji Electric	2SK3556-01S	273Kb / 4P	N-CHANNEL SILICON POWER MOSFET
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Fuji Electric	2SK3556-01SJ	273Kb / 4P	N-CHANNEL SILICON POWER MOSFET

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