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TC7MA245FK Datasheet(Fiches technique) 3 Page - Toshiba Semiconductor

Numéro de pièce TC7MA245FK
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Télécharger  10 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TC7MA245FK
2001-10-23
3
Maximum Ratings
Characteristics
Symbol
Rating
Unit
Power supply voltage
VCC
−0.5~4.6
V
DC input voltage (DIR, OE )
VIN
−0.5~4.6
V
−0.5~4.6
(Note1)
DC bus I/O voltage
VI/O
−0.5~VCC + 0.5 (Note2)
V
Input diode current
IIK
−50
mA
Output diode current
IOK
±50
(Note3)
mA
DC output current
IOUT
±50
mA
Power dissipation
PD
180
mW
DC VCC/ground current
ICC/IGND
±100
mA
Storage temperature
Tstg
−65~150
°C
Note1: Off-state
Note2: High or low state. IOUT absolute maximum rating must be observed.
Note3: VOUT < GND, VOUT > VCC
Recommended Operating Range
Characteristics
Symbol
Rating
Unit
1.8~3.6
Supply voltage
VCC
1.2~3.6
(Note4)
V
Input voltage (DIR, OE )
VIN
−0.3~3.6
V
0~3.6
(Note5)
Bus I/O voltage
VI/O
0~VCC
(Note6)
V
±24
(Note7)
±18
(Note8)
Output current
IOH/IOL
±6
(Note9)
mA
Operating temperature
Topr
−40~85
°C
Input rise and fall time
dt/dv
0~10
(Note10)
ns/V
Note4: Data retention only
Note5: Off-state
Note6: High or low state
Note7: VCC = 3.0~3.6 V
Note8: VCC = 2.3~2.7 V
Note9: VCC = 1.8 V
Note10: VIN = 0.8~2.0 V, VCC = 3.0 V




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