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TC7MA245FK Datasheet(Fiches technique) 4 Page - Toshiba Semiconductor

Numéro de pièce TC7MA245FK
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Télécharger  10 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TC7MA245FK
2001-10-23
4
Electrical Characteristics
DC Characteristics (Ta
==== −−−−40~85°C, 2.7 V <<<< VCC <<<<==== 3.6 V)
Characteristics
Symbol
Test Condition
VCC (V)
Min
Max
Unit
High level
VIH
2.7~3.6
2.0
Input voltage
Low level
VIL
2.7~3.6
0.8
V
IOH = −100 µA
2.7~3.6
VCC
− 0.2
IOH = −12 mA
2.7
2.2
IOH = −18 mA
3.0
2.4
High level
VOH
VIN = VIH or VIL
IOH = −24 mA
3.0
2.2
IOL = 100 µA
2.7~3.6
0.2
IOL = 12 mA
2.7
0.4
IOL = 18 mA
3.0
0.4
Output voltage
Low level
VOL
VIN = VIH or VIL
IOL = 24 mA
3.0
0.55
V
Input leakage current
IIN
VIN = 0~3.6 V
2.7~3.6
±5.0
µA
3-state output off-state current
IOZ
VIN = VIH or VIL
VOUT = 0~3.6 V
2.7~3.6
±10.0
µA
Power off leakage current
IOFF
VIN, VOUT = 0~3.6 V
0
10.0
µA
VIN = VCC or GND
2.7~3.6
20.0
Quiescent supply current
ICC
VCC <
= (VIN, VOUT) <= 3.6 V
2.7~3.6
±20.0
Increase in ICC per input
∆ICC
VIH = VCC − 0.6 V
2.7~3.6
750
µA
DC Characteristics (Ta
==== −−−−40~85°C, 2.3 V <<<<==== VCC <<<<==== 2.7 V)
Characteristics
Symbol
Test Condition
VCC (V)
Min
Max
Unit
High level
VIH
2.3~2.7
1.6
Input voltage
Low level
VIL
2.3~2.7
0.7
V
IOH = −100 µA
2.3~2.7
VCC
− 0.2
IOH = −6 mA
2.3
2.0
IOH = −12 mA
2.3
1.8
High level
VOH
VIN = VIH or VIL
IOH = −18 mA
2.3
1.7
IOL = 100 µA
2.3~2.7
0.2
IOL = 12 mA
2.3
0.4
Output voltage
Low level
VOL
VIN = VIH or VIL
IOL = 18 mA
2.3
0.6
V
Input leakage current
IIN
VIN = 0~3.6 V
2.3~2.7
±5.0
µA
3-state output off-state current
IOZ
VIN = VIH or VIL
VOUT = 0~3.6 V
2.3~2.7
±10.0
µA
Power off leakage current
IOFF
VIN, VOUT = 0~3.6 V
0
10.0
µA
VIN = VCC or GND
2.3~2.7
20.0
Quiescent supply current
ICC
VCC <
= (VIN, VOUT) <= 3.6 V
2.3~2.7
±20.0
µA




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