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KFG1G16U2M-DID6 Fiches technique(PDF) 7 Page - Samsung semiconductor

No de pièce KFG1G16U2M-DID6
Description  FLASH MEMORY(54MHz)
Download  125 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KFG1G16U2M-DID6 Fiches technique(HTML) 7 Page - Samsung semiconductor

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OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
7
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
1.5
Product Features
Device Architecture
• Design Technology:
• Supply Voltage:
• Host Interface:
• 5KB Internal BufferRAM:
• SLC NAND Array:
Device Performance
• Host Interface Type:
• Programmable Burst Read Latency:
• Multiple Sector Read/Write:
• Multiple Reset Modes:
• Multi Block Erase:
• Low Power Dissipation:
System Hardware
• Voltage detector generating internal reset signal from Vcc
• Hardware reset input (RP)
• Data Protection Modes
• User-controlled One Time Programmable(OTP) area
• Internal 2bit EDC / 1bit ECC
• Internal Bootloader supports Booting Solution in system
• Handshaking Feature
• Detailed chip information
Packaging
• 1G products
• 2G DDP products
• 4G QDP products
90nm
1.8V (1.7V ~ 1.95V)
16 bit
1KB BootRAM, 4KB DataRAM
(2K+64)B Page Size, (128K+4K)B Block Size
Synchronous Burst Read
- Up to 54MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-words with wrap around
- Continuous 1K word Sequential Burst
Asynchronous Random Read
- 76ns access time
Asynchronous Random Write
Latency 3(up to 40MHz), 4, 5, 6, and 7
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Resets
Up to 64 Blocks
Typical Power,
- Standby current :
10uA @ Single , 20uA @ DDP, 40uA @ QDP
- Synchronous Burst Read current(54MHz) :
12mA @ Single, 17mA @ DDP/QDP
- Load current : 30mA
- Program current : 25mA
- Erase current : 20mA
- Multi Block Erase current : 20mA
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- Write Protection for BootRAM
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down
- INT pin indicates Ready / Busy
- Polling the interrupt register status bit
- by ID register
63ball, 10mm x 13mm x max 1.0mmt, 0.8mm ball pitch FBGA
63ball, 11mm x 13mm x max 1.2mmt, 0.8mm ball pitch FBGA
63ball, 11mm x 13mm x max 1.4mmt, 0.8mm ball pitch FBGA


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