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FDS8880 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDS8880
Description  N-Channel PowerTrench MOSFET
Download  12 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8880 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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FDS8880 Rev. A1
www.fairchildsemi.com
2
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics T
A = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
11.6
A
Continuous (TA = 25
oC, V
GS = 10V, R
θJA = 50
oC/W)
Continuous (TA = 25
oC, V
GS = 4.5V, R
θJA = 50
oC/W)
10.7
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
82
mJ
PD
Power dissipation
2.5
W
Derate above 25
oC20
mW/
oC
TJ, TSTG
Operating and Storage Temperature
-55 to 150
oC
RθJC
Thermal Resistance, Junction to Case (Note 2)
25
oC/W
RθJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
50
oC/W
RθJA
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
85
oC/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDS8880
FDS8880
SO-8
330mm
12mm
2500 units
FDS8880
FDS8880_NL (Note 4)
SO-8
330mm
12mm
2500 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 24V
-
-
1
µA
VGS = 0V
TA = 150
oC-
-
250
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.2
-
2.5
V
rDS(ON)
Drain to Source On Resistance
ID = 11.6A, VGS = 10V
-
0.0079
0.010
ID = 10.7A, VGS = 4.5V
-
0.0096
0.012
ID = 11.6A, VGS = 10V,
TA = 150
oC
-
0.0125
0.0163
CISS
Input Capacitance
VDS = 15V, VGS = 0V,
f = 1MHz
-1235
-
pF
COSS
Output Capacitance
-
260
-
pF
CRSS
Reverse Transfer Capacitance
-
150
-
pF
RG
Gate Resistance
VGS = 0.5V, f = 1MHz
0.6
2.5
4.3
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
VDD = 15V
ID = 11.6A
Ig = 1.0mA
-23
30
nC
Qg(5)
Total Gate Charge at 5V
VGS = 0V to 5V
-
12
16
nC
Qg(TH)
Threshold Gate Charge
VGS = 0V to 1V
-
1.3
1.6
nC
Qgs
Gate to Source Gate Charge
-
3.3
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
2.0
-
nC
Qgd
Gate to Drain “Miller” Charge
-
4.2
-
nC


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