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FDS8880 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDS8880 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page FDS8880 Rev. A1 www.fairchildsemi.com 2 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 11.6 A Continuous (TA = 25 oC, V GS = 10V, R θJA = 50 oC/W) Continuous (TA = 25 oC, V GS = 4.5V, R θJA = 50 oC/W) 10.7 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 1) 82 mJ PD Power dissipation 2.5 W Derate above 25 oC20 mW/ oC TJ, TSTG Operating and Storage Temperature -55 to 150 oC RθJC Thermal Resistance, Junction to Case (Note 2) 25 oC/W RθJA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 oC/W RθJA Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 oC/W Device Marking Device Package Reel Size Tape Width Quantity FDS8880 FDS8880 SO-8 330mm 12mm 2500 units FDS8880 FDS8880_NL (Note 4) SO-8 330mm 12mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 24V - - 1 µA VGS = 0V TA = 150 oC- - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V rDS(ON) Drain to Source On Resistance ID = 11.6A, VGS = 10V - 0.0079 0.010 Ω ID = 10.7A, VGS = 4.5V - 0.0096 0.012 ID = 11.6A, VGS = 10V, TA = 150 oC - 0.0125 0.0163 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz -1235 - pF COSS Output Capacitance - 260 - pF CRSS Reverse Transfer Capacitance - 150 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz 0.6 2.5 4.3 Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 11.6A Ig = 1.0mA -23 30 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 12 16 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 1.3 1.6 nC Qgs Gate to Source Gate Charge - 3.3 - nC Qgs2 Gate Charge Threshold to Plateau - 2.0 - nC Qgd Gate to Drain “Miller” Charge - 4.2 - nC |
Numéro de pièce similaire - FDS8880 |
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Description similaire - FDS8880 |
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