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BUZ900DP Fiches technique(PDF) 1 Page - List of Unclassifed Manufacturers |
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BUZ900DP Fiches technique(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 3 page TEC MAGNA Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95 BUZ900DP BUZ901DP VDSX Drain – Source Voltage VGSS Gate – Source Voltage ID Continuous Drain Current ID(PK) Body Drain Diode PD Total Power Dissipation @ Tcase = 25°C Tstg Storage Temperature Range Tj Maximum Operating Junction Temperature RθJC Thermal Resistance Junction – Case ±14V 16A 16A 250W –55 to 150°C 150°C 0.5°C/W MECHANICAL DATA Dimensions in mm 123 0.6 2.8 5.0 20.0 5.45 5.45 1.2 2.0 3.4 2.0 1.0 3.3 Dia. N–CHANNEL POWER MOSFET FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE TO–3PBL Pin 1 – Gate Pin 2 – Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) POWER MOSFETS FOR AUDIO APPLICATIONS BUZ900DP 160V BUZ901DP 200V Case is Source |
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