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TD62S310AFM Datasheet(Fiches technique) 3 Page - Toshiba Semiconductor

Numéro de pièce TD62S310AFM
Description  TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Télécharger  6 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TD62S310AFM
2001-12-05
3
Test Circuit
1. ICEX
2. VCE (sat)
3. IIN (ON), ICC
4. VIN (ON), VIN (OFF)
5. tON, tOFF
Note 6: Pulse width 50
ms, Duty cycle 10%
Output impedance 50
W, tr <= 5 ns, tf <= 10 ns
Note 7: CL includes probe and jig capacitance.
VCC
VIN
VCE (sat)
IOUT
ICC
VCC
VIN
IIN (ON)
VCC
VIN (ON)
VIN (OFF)
VCE
IOUT
ICEX
VCC
VIN
Pulse
generator
INPUT
CL (Note 7)
(Note 6)
VCC
RL
10%
90%
90%
10%
10%
50%
50%
tON
tOFF
tf
tr
5 V
0
VOH
VOL
OUTPUT
INPUT
90%
50
ms
Caution on Application
1. The device does not include protectors such as an overcurrent protector and an overvoltage protector.
Applying excessive current or voltage may damage the device.
Thus, design with great care to prevent excessive current or voltage from being applied to the device.
The device may also be damaged by short-circuits between outputs and power supply/ground.
Take care when designing output, VCC and GND line.
2. If the TD62S310AFM is used to drive an inductive load (such as a motor, solenoid, or relay), Toshiba
recommends that the diodes be connected between pin 1 and pin 5 so as to absorb the counter
electromotive force generated by the load.
Please adhere to the maximum ratings of this device.
3. Be sure to mount the device in the correct orientation. Make sure that the positive and negative
power supply pins are connected the right way round. Otherwise, the absolute maximum current
and power dissipation ratings may be exceeded and the device may break down or undergo
performance degradation, causing it to catch fire or explode, and resulting in injury.




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