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TC7PA04FU Datasheet(Fiches technique) 5 Page - Toshiba Semiconductor

Numéro de pièce TC7PA04FU
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Télécharger  8 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TC7PA04FU
2002-08-21
5
Dynamic Switching Characteristics (Ta
==== 25°C, input tr ==== tf ==== 2.0 ns, CL ==== 30 pF)
Characteristics
Symbol
Test Condition
VCC (V)
TYP.
Unit
VIN = 1.8 V, VIL = 0 V
(Note 11)
1.8
0.25
VIN = 2.5 V, VIL = 0 V
(Note 11)
2.5
0.6
Quiet Output Maximum Dynamic
VOL
VOLP
VIN = 3.3 V, VIL = 0 V
(Note 11)
3.3
0.8
ns
VIN = 1.8 V, VIL = 0 V
(Note 11)
1.8
-0.25
VIN = 2.5 V, VIL = 0 V
(Note 11)
2.5
-0.6
Quiet Output Minimum Dynamic
VOL
VOLV
VIN = 3.3 V, VIL = 0 V
(Note 11)
3.3
-0.8
ns
VIN = 1.8 V, VIL = 0 V
(Note 11)
1.8
1.5
VIN = 2.5 V, VIL = 0 V
(Note 11)
2.5
1.9
Quiet Output Minimum Dynamic
VOH
VOLP
VIN = 3.3 V, VIL = 0 V
(Note 11)
3.3
2.2
ns
Note 11: Characteristics guaranteed by design.
Capacitive Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
VCC (V)
TYP.
Unit
Input Capacitance
CIN
¾
1.8, 2.5, 3.3
5
pF
Power Dissipation Capacitance
CPD
fIN = 10 MHz
(Note 12)
1.8, 2.5, 3.3
18
pF
Note 12: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr.) = CPD・VCC・fIN + ICC/2




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