FDD24AN06LA0 datasheet(2/11 Pages) FAIRCHILD

No de pièce	FDD24AN06LA0

Description	N CHANNEL LOGIC LEVEL POWER TRENCH MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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FDD24AN06LA0 Rev. A1

Package Marking and Ordering Information

Electrical Characteristics T

C = 25°C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics (V

GS = 5V)

Drain-Source Diode Characteristics

Notes:

1: Starting TJ = 25°C, L = 80µH, IAS = 28A.

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD24AN06LA0

TO-252AA

330mm

16mm

2500 units

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250µA, VGS = 0V

60

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 50V

-

1

µA

VGS = 0V

TC = 150

oC-

-

250

IGSS

Gate to Source Leakage Current

VGS = ±20V

-

±100

nA

VGS(TH)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA1

-

2

V

rDS(ON)

Drain to Source On Resistance

ID = 40A, VGS = 10V

-

0.016

0.019

Ω

ID = 36A, VGS = 5V

-

0.020

0.024

ID = 36A, VGS = 5V,

TJ = 175

oC

-

0.047

0.056

CISS

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1MHz

-

1850

-

pF

COSS

Output Capacitance

-

180

-

pF

CRSS

Reverse Transfer Capacitance

-

75

-

pF

Qg(TOT)

Total Gate Charge at 5V

VGS = 0V to 5V

VDD = 30V

ID = 36A

Ig = 1.0mA

16

21

nC

Qg(TH)

Threshold Gate Charge

VGS = 0V to 1V

-

1.8

2.4

nC

Qgs

Gate to Source Gate Charge

-

6.3

-

nC

Qgs2

Gate Charge Threshold to Plateau

-

4.5

-

nC

Qgd

Gate to Drain “Miller” Charge

-

5.0

-

nC

tON

Turn-On Time

VDD = 30V, ID = 36A

VGS = 5V, RGS = 9.1Ω

--

195

ns

td(ON)

Turn-On Delay Time

-

12

-

ns

tr

Rise Time

-

118

-

ns

td(OFF)

Turn-Off Delay Time

-

26

-

ns

tf

Fall Time

-

41

-

ns

tOFF

Turn-Off Time

-

101

ns

VSD

Source to Drain Diode Voltage

ISD = 36A

-

1.25

V

ISD = 18A

-

1.0

V

trr

Reverse Recovery Time

ISD = 36A, dISD/dt = 100A/µs-

-

34

ns

QRR

Reverse Recovered Charge

ISD = 36A, dISD/dt = 100A/µs-

-

30

nC

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