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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF6614 Fiches technique(PDF) 1 Page - International Rectifier |
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IRF6614 Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 11/8/04 IRF6614 DirectFET Power MOSFET DirectFET ISOMETRIC ST PD -96907A Fig 1. Typical On-Resistance Vs. Gate Voltage Typical values (unless otherwise specified) l Application Specific MOSFETs l Lead and Bromide Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching above 1MHz l Ideal for CPU Core and Telecom Synchronous Rectification in DC-DC Converters l Optimized for Control FET socket of Sync. Buck Converter l Low Conduction Losses l Compatible with existing Surface Mount Techniques Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET MOSFETs Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 10.2A. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Notes: Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT Description The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera- tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V h ID @ TA = 70°C Continuous Drain Current, VGS @ 10V h A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V k IDM Pulsed Drain Current e EAS Single Pulse Avalanche Energy f mJ IAR Avalanche Current Ãe A 10.2 Max. 10.1 55 102 ±20 40 12.7 22 2.0 4.0 6.0 8.0 10.0 VGS, Gate-to-Source Voltage (V) 4 8 12 16 20 TJ = 25°C TJ = 125°C ID = 12.7A 0 102030 4050 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 VDS= 32V VDS= 20V ID= 10.2A VDSS VGS RDS(on) RDS(on) 40V max ±20V max 5.9m Ω@ 10V 7.1mΩ@ 4.5V Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V |
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Description similaire - IRF6614 |
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