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S29GL512N Fiches technique(PDF) 1 Page - Cypress Semiconductor |
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S29GL512N Fiches technique(HTML) 1 Page - Cypress Semiconductor |
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1 / 92 page  Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 002-01522 Rev. *B Revised January 08, 2016 S29GL512N S29GL256N S29GL128N 512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit This product family has been retired and is not recommended for designs. For new and current designs, S29GL128S, S29GL256S, and S29GL512T supersede the S29GL128N, S29GL256N, and S29GL512N respectively. These are the factory-recommended migration paths. Please refer to the S29GL-S and S29GL-T Family data sheets for specifications and ordering information. Distinctive Characteristics Architectural Advantages Single Power Supply Operation – 3 volt read, erase, and program operations Enhanced VersatileI/O Control – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC Manufactured on 110 nm MirrorBit Process Technology Secured Silicon Sector Region – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence – May be programmed and locked at the factory or by the customer Flexible Sector Architecture – S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors – S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors – S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte) sectors Compatibility with JEDEC Standards – Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection 100,000 Erase Cycles per sector typical 20-year Data Retention typical Performance Characteristics High Performance – 90 ns access time (S29GL128N, S29GL256N) – 100 ns (S29GL512N) – 8-word/16-byte page read buffer – 25 ns page read times – 16-word/32-byte write buffer reduces overall programming time for multiple-word updates Low Power Consumption (typical values at 3.0 V, 5 MHz) – 25 mA typical active read current; – 50 mA typical erase/program current – 1 µA typical standby mode current Package Options – 56-pin TSOP – 64-ball Fortified BGA Software & Hardware Features Software Features – Program Suspend and Resume: read other sectors before programming operation is completed – Erase Suspend and Resume: read/program other sectors before an erase operation is completed – Data# polling and toggle bits provide status – Unlock Bypass Program command reduces overall multiple-word programming time – CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices Hardware Features – Advanced Sector Protection – WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings – Hardware reset input (RESET#) resets device – Ready/Busy# output (RY/BY#) detects program or erase cycle completion Product Availability Table Density Init. Access VCC Availability 512 Mb 110 ns Full Now 100 ns Full Now 256 Mb 110 ns Full Now 100 ns Full Now 90 ns Regulated Now 128 Mb 110 ns Full Now 100 ns Full Now 90 ns Regulated Now |
Numéro de pièce similaire - S29GL512N |
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Description similaire - S29GL512N |
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