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2SK3296-S Fiches technique(PDF) 1 Page - NEC |
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2SK3296-S Fiches technique(HTML) 1 Page - NEC |
1 / 8 page © 1999, 2000 MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D14063EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 12 m Ω MAX. (VGS = 10 V, ID = 18 A) • Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) • Built-in gate protection diode • Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±35 A Drain Current (Pulse) Note ID(pulse) ±140 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note PW ≤ 10 µs, Duty Cycle ≤ 1% ORDERING INFORMATION PART NUMBER PACKAGE 2SK3296 TO-220AB 2SK3296-S TO-262 2SK3296-ZK TO-263(MP-25ZK) 2SK3296-ZJ TO-263(MP-25ZJ) The mark shows major revised points. |
Numéro de pièce similaire - 2SK3296-S |
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Description similaire - 2SK3296-S |
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