RN4901FE datasheet(3/4 Pages) TOSHIBA

No de pièce	RN4901FE

Description	TOSHIBA Transistor Silicon PNP - NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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RN4901FE

2003-01-10

3

Electrical Characteristics (Ta

==== 25°C) (Q1)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = -50 V, IE = 0

¾

-100

Collector cut-off current

ICEO

VCE = -50 V, IB = 0

¾

-500

nA

Emitter cut-off current

IEBO

VEB = -10 V, IC = 0

-0.82

¾

-1.52

mA

DC current gain

hFE

VCE = -5 V, IC = -10 mA

30

¾

Collector-emitter saturation voltage

VCE (sat)

IC = -5 mA, IB = -0.25 mA

¾

-0.1

-0.3

V

Input voltage (ON)

VI (ON)

VCE = -0.2 V, IC = -5 mA

-1.1

¾

-2.0

V

Input voltage (OFF)

VI (OFF)

VCE = -5 V, IC = -0.1 mA

-1.0

¾

-1.5

V

Transition frequency

fT

VCE = -10 V, IC = -5 mA

¾

200

¾

MHz

Collector output capacitance

Cob

VCB = -10 V, IE = 0, f = 1 MHz

¾

3

6

pF

Electrical Characteristics (Ta

==== 25°C) (Q2)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = 50 V, IE = 0

¾

100

Collector cut-off current

ICEO

VCE = 50 V, IB = 0

¾

500

nA

Emitter cut-off current

IEBO

VEB = 10 V, IC = 0

0.82

¾

1.52

mA

DC current gain

hFE

VCE = 5 V, IC = 10 mA

30

¾

Collector-emitter saturation voltage

VCE (sat)

IC = 5 mA, IB = 0.25 mA

¾

0.1

0.3

V

Input voltage (ON)

VI (ON)

VCE = 0.2 V, IC = 5 mA

1.1

¾

2.0

V

Input voltage (OFF)

VI (OFF)

VCE = 5 V, IC = 0.1 mA

1.0

¾

1.5

V

Transition frequency

fT

VCE = 10 V, IC = 5 mA

¾

250

¾

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

¾

3

6

pF

Electrical Characteristics (Ta

==== 25°C) (Q1, Q2 common)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Input resistor

R1

¾

3.29

4.7

6.11

k

W

Resistor ratio

R1/R2

¾

0.9

1.0

1.1

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