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TPCS8101 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TPCS8101
Description  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8101 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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TPCS8101
2003-02-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Rth (ch-a)
83.3
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
208
°C/W
Marking (Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −6.0 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: ○ on lower right of the marking indicates Pin 1.
Type
S8101
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
Lot No.
Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)


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