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TC58256AFT Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TC58256AFT Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 33 page TC58256AFT 2001-05-30 2/33 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS SYMBOL RATING VALUE UNIT VCC Power Supply Voltage -0.6 to 4.6 V VIN Input Voltage -0.6 to 4.6 V VI/O Input/Output Voltage -0.6 V to VCC + 0.3 V (£ 4.6 V) V PD Power Dissipation 0.3 W Tsolder Soldering Temperature (10s) 260 °C Tstg Storage Temperature -55 to 150 °C Topr Operating Temperature 0 to 70 °C CAPACITANCE *(Ta ==== 25°C, f ==== 1 MHz) SYMB0L PARAMETER CONDITION MIN MAX UNIT CIN Input VIN = 0 V ¾ 10 pF COUT Output VOUT = 0 V ¾ 10 pF * This parameter is periodically sampled and is not tested for every device. I/O Control circuit Status register Address register Command register Column buffer Column decoder Data register Sense amp Memory cell array Control HV generator Logic control BY / RY VCC I/O1 VSS I/O8 to WP CE CLE ALE WE RE BY / RY |
Numéro de pièce similaire - TC58256AFT |
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Description similaire - TC58256AFT |
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