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SM25GZ51 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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SM25GZ51 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page SM25GZ51,SM25JZ51 2001-07-13 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current IDRM VDRM = Rated ― ― 20 µA I T2 (+) , Gate (+) ― ― 1.5 II T2 (+) , Gate (−) ― ― 1.5 Gate Trigger Voltage III VGT VD = 12V RL = 20Ω T2 (−) , Gate (−) ― ― 1.5 V I T2 (+) , Gate (+) ― ― 30 II T2 (+) , Gate (−) ― ― 30 Gate Trigger Current III IGT VD = 12V RL = 20Ω T2 (−) , Gate (−) ― ― 30 mA Peak On−State Voltage VTM ITM = 40A ― ― 1.5 V Gate Non−Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 ― ― V Holding Current IH VD = 12V, ITM = 1A ― ― 60 mA Thermal Resistance Rth (j−c) Junction to Case, AC ― ― 1.3 °C / W Critical Rate of Rise of Off−State Voltage dv / dt VDRM = Rated, Tj = 125°C Exponential Rise ― 300 ― V / µs Critical Rate of Rise of Off−State Voltage at Commutation (dv / dt) c VDRM = 400V, Tj = 125°C (di / dt) c = − 15A / ms 10 ― ― V / µs MARKING NUMBER SYMBOL MARK SM25GZ51 M25GZ51 *1 TYPE SM25JZ51 M25JZ51 *2 Example 8A : January 1998 8B : February 1998 8L : December 1998 |
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