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CSPESD301 Fiches technique(PDF) 3 Page - California Micro Devices Corp |
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CSPESD301 Fiches technique(HTML) 3 Page - California Micro Devices Corp |
3 / 7 page © 2003 California Micro Devices Corp. All rights reserved. 12/10/03 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 L Tel: 408.263.3214 L Fax: 408.263.7846 L www.calmicro.com 3 CSPESD301/302/303 Specifications Note 1: TA=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to another diode, one at a time. Note 3: Unused pins are left open. Note 4: These parameters are guaranteed by design and char- acterization. Figure 1. Parameter Legend ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Storage Temperature Range -65 to +150 °C DC Package Power Rating 200 mW STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature Range -40 to +85 °C ELECTRICAL OPERATING CHARACTERISTICS1 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VSO Diode Stand-off Voltage IDIODE = ±10µA ±5.9 V ILEAK Diode Leakage Current VIN=3.3V 100 nA VSIG Small Signal Clamp Voltage Positive Clamp Negative Clamp IDIODE = 10mA IDIODE = -10mA 6.0 -9.2 7.6 -7.6 9.2 -6.0 V V VESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Notes 2, 3 and 4 ±30 ±15 kV kV VCL Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Between adjacent bumps Between diagonal bumps Notes 2, 3 and 4 19.5 19.9 V V RD Dynamic Resistance Between adjacent bumps Between diagonal bumps Notes 2, 3 and 4 0.85 1.10 Ω Ω C Capacitance At 0VDC, 1MHz, 30mVAC 27 pF 3.3V 10mA 10µA VSIG VCL V IESD ILEAK slope = 1/R D VSO I |
Numéro de pièce similaire - CSPESD301 |
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Description similaire - CSPESD301 |
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