Moteur de recherche de fiches techniques de composants électroniques |
|
IRF6602 Fiches technique(PDF) 2 Page - International Rectifier |
|
IRF6602 Fiches technique(HTML) 2 Page - International Rectifier |
2 / 11 page IRF6602/IRF6602TR1 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 10 13 m Ω ––– 14 19 VGS(th) Gate Threshold Voltage 1.0 2.0 2.3 V ∆V GS(th) Gate Threshold Voltage Coefficient ––– -4.4 ––– mV/°C ––– ––– 100 IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 125 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 gfs Forward Transconductance 20 ––– ––– S Qg Total Gate Charge ––– 12 18 Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.5 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.3 ––– nC Qgd Gate-to-Drain Charge ––– 4.2 ––– Qgodr Gate Charge Overdrive ––– 3.0 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 5.5 ––– Qoss Output Charge ––– 19 ––– nC RG Gate Resistance ––– 2.8 4.2 Ω td(on) Turn-On Delay Time ––– 33 ––– tr Rise Time ––– 6.0 ––– td(off) Turn-Off Delay Time ––– 14 ––– ns tf Fall Time –––12––– Ciss Input Capacitance ––– 1420 ––– Coss Output Capacitance ––– 960 ––– pF Crss Reverse Transfer Capacitance ––– 100 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 48 (Body Diode) A ISM Pulsed Source Current ––– ––– 380 (Body Diode) à VSD Diode Forward Voltage ––– 0.83 1.2 V trr Reverse Recovery Time ––– 42 62 ns Qrr Reverse Recovery Charge ––– 51 77 nC ––– VGS = 4.5V Typ. ––– ––– ID = 8.8A VGS = 0V VDS = 10V ID = 8.8A 97 TJ = 25°C, IF = 8.8A di/dt = 100A/µs e TJ = 25°C, IS = 8.8A, VGS = 0V e showing the integral reverse p-n junction diode. 8.8 MOSFET symbol Conditions VDS = 16V, VGS = 0V, TJ = 125°C VDS = 10V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 11A e VDS = 20V, VGS = 0V VGS = 4.5V, ID = 8.8A e VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VGS = 20V VGS = -20V 4.2 ƒ = 1.0MHz VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V Ãe Max. Clamped Inductive Load VDS = 10V, ID = 8.8A |
Numéro de pièce similaire - IRF6602 |
|
Description similaire - IRF6602 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |