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SI7802DN Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI7802DN Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 3 page SPICE Device Model Si7802DN Vishay Siliconix www.vishay.com Document Number: 73173 2 07-Oct-04 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.8 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 14 A VGS = 10 V, ID = 1.95 A 0.362 0.360 Drain-Source On-State Resistance a rDS(on) VGS = 6 V, ID = 1.9 A 0.369 0.370 Ω Forward Transconductance a gfs VDS = 15 V, ID = 1.95 A 4 8 S Diode Forward Voltage a VSD IS = 3.2 A, VGS = 0 V 0.74 0.80 V Dynamic b Total Gate Charge Qg 12 14 Gate-Source Charge Qgs 2.8 2.8 Gate-Drain Charge Qgd VDS = 125 V, VGS = 10 V, ID = 1.95 A 4.4 4.4 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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