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TSM10NB60 Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No de pièce TSM10NB60
Description  High power and current handling capability
Download  7 Pages
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Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM10NB60 Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM10NB60
Taiwan Semiconductor
Document Number: DS_P0000276
2
Version: A15
ELECTRICAL SPECIFICATIONS (T
A = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
(Note 4)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
600
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2
--
4
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
10
µA
Drain-Source On-State Resistance
VGS = 10V, ID = 5A
RDS(on)
--
0.65
0.75
Ω
Dynamic
(Note 5)
Total Gate Charge
VDS = 380V, ID = 10A,
VGS = 10V
Qg
--
39
--
nC
Gate-Source Charge
Qgs
--
9
--
Gate-Drain Charge
Qgd
--
13
--
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ciss
--
1820
--
pF
Output Capacitance
Coss
--
186
--
Reverse Transfer Capacitance
Crss
24
Gate Resistance
F = 1MHz, open drain
Rg
--
10
--
Ω
Switching
(Note 6)
Turn-On Delay Time
VDD = 380V,
RGEN = 25Ω,
ID = 10A, VGS = 10V,
td(on)
--
32
--
ns
Turn-On Rise Time
tr
--
12
--
Turn-Off Delay Time
td(off)
--
125
--
Turn-Off Fall Time
tf
--
27
--
Source-Drain Diode
(Note 4)
Forward On Voltage
IS = 10A, VGS = 0V
VSD
--
--
1.4
V
Reverse Recovery Time
VR = 100V, IS = 10A
dIF/dt = 100A/μs
trr
--
363
--
ns
Reverse Recovery Charge
Qrr
--
4.5
--
μC
Notes:
1.
Current limited by package.
2.
Pulse width limited by the maximum junction temperature.
3.
L = 0.75mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4.
Pulse test: PW
≤ 300µs, duty cycle ≤ 2%.
5.
For DESIGN AID ONLY, not subject to production testing.
6.
Switching time is essentially independent of operating temperature.


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