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TSM10NB60 Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM10NB60 Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 7 page TSM10NB60 Taiwan Semiconductor Document Number: DS_P0000276 2 Version: A15 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 -- 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 µA Drain-Source On-State Resistance VGS = 10V, ID = 5A RDS(on) -- 0.65 0.75 Ω Dynamic (Note 5) Total Gate Charge VDS = 380V, ID = 10A, VGS = 10V Qg -- 39 -- nC Gate-Source Charge Qgs -- 9 -- Gate-Drain Charge Qgd -- 13 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 1820 -- pF Output Capacitance Coss -- 186 -- Reverse Transfer Capacitance Crss 24 Gate Resistance F = 1MHz, open drain Rg -- 10 -- Ω Switching (Note 6) Turn-On Delay Time VDD = 380V, RGEN = 25Ω, ID = 10A, VGS = 10V, td(on) -- 32 -- ns Turn-On Rise Time tr -- 12 -- Turn-Off Delay Time td(off) -- 125 -- Turn-Off Fall Time tf -- 27 -- Source-Drain Diode (Note 4) Forward On Voltage IS = 10A, VGS = 0V VSD -- -- 1.4 V Reverse Recovery Time VR = 100V, IS = 10A dIF/dt = 100A/μs trr -- 363 -- ns Reverse Recovery Charge Qrr -- 4.5 -- μC Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 0.75mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. |
Numéro de pièce similaire - TSM10NB60 |
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Description similaire - TSM10NB60 |
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