BUB323Z datasheet(2/12 Pages) ONSEMI

No de pièce	BUB323Z

Description	NPN Silicon Power Darlington

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Fabricant	ONSEMI [ON Semiconductor]

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BUB323Z

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (Note 1.)

Collector–Emitter Clamping Voltage (IC = 7.0 A)

(TC = –40°C to +125°C)

VCLAMP

350

–

450

Vdc

Collector–Emitter Cutoff Current

(VCE = 200 V, IB = 0)

ICEO

–

100

µAdc

Emitter–Base Leakage Current

(VEB = 6.0 Vdc, IC = 0)

IEBO

–

50

mAdc

ON CHARACTERISTICS (Note 1.)

Base–Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 100 mAdc)

(IC = 10 Adc, IB = 0.25 Adc)

VBE(sat)

–

2.2

2.5

Vdc

Collector–Emitter Saturation Voltage

(IC = 7.0 Adc, IB = 70 mAdc)

(TC = 125°C)

(IC = 8.0 Adc, IB = 0.1 Adc)

(TC = 125°C)

(IC = 10 Adc, IB = 0.25 Adc)

VCE(sat)

–

1.6

1.8

2.1

1.7

Vdc

Base–Emitter On Voltage

(IC = 5.0 Adc, VCE = 2.0 Vdc)

(TC = –40°C to +125°C)

(IC = 8.0 Adc, VCE = 2.0 Vdc)

VBE(on)

1.1

1.3

–

2.1

2.3

Vdc

Diode Forward Voltage Drop

(IF = 10 Adc)

VF

–

2.5

Vdc

DC Current Gain

(IC = 6.5 Adc, VCE = 1.5 Vdc)

(TC = –40°C to +125°C)

(IC = 5.0 Adc, VCE = 4.6 Vdc)

hFE

150

500

–

3400

–

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

–

2.0

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

–

200

pF

Input Capacitance

(VEB = 6.0 V)

Cib

–

550

pF

CLAMPING ENERGY (see notes)

Repetitive Non–Destructive Energy Dissipated at turn–off:

(IC = 7.0 A, L = 8.0 mH, RBE = 100 Ω) (see Figures 2 and 4)

WCLAMP

200

–

mJ

SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)

Fall Time

(IC = 6.5 A, IB1 = 45 mA,

tfi

–

625

–

ns

Storage Time

(IC = 6.5 A, IB1 = 45 mA,

VBE(off) = 0, RBE(off) = 0,

V

14 V V

300 V)

tsi

–

10

30

µs

Cross–over Time

BE(off)

VCC = 14 V, VZ = 300 V)

tc

–

1.7

–

µs

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle = 2.0%.

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