2SK3125 datasheet(4/6 Pages) TOSHIBA

No de pièce	2SK3125

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Download	6 Pages

Scroll/Zoom	100%

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

Logo

4 / 6 page

2SK3125

2002-08-23

4

RDS (ON) - Tc

IDR - VDS

Dynamic input/output characteristics

PD - Tc

Case temperature Tc (°C)

Drain-source voltage VDS (V)

Total gate charge Qg (nC)

Case temperature Tc (°C)

Vth – Tc

Case temperature Tc (°C)

0

-80

-40

0

40

80

120

160

1

2

3

5

4

Common source

VDS = 10 V

ID = 1 mA

Pulse test

6

0

20

40

80

200

Common source

ID = 70 A

Tc

= 25°C

Pulse test

120

10

30

40

VDD = 24 V

VDS

VGS

50

160

0

10

20

5

15

25

12

0

50

150

100

200

0

40

120

200

80

160

-80

-40

0

40

80

120

160

0

4

8

12

16

20

Common source

VGS = 10 V

Pulse test

ID = 15, 30 A

70

1000

Common source

Tc

= 25°C

Pulse test

VGS = 0 V, -1 V

3

5

1

10

100

1

0

0.4

1.2

0.8

1.6

2.0

Numéro de pièce similaire - 2SK3125

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	2SK3125	204Kb / 6P	Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications
	2SK3125	192Kb / 6P	DC-DC Converter, Relay Drive and
	2SK3125	204Kb / 6P	Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications
	2SK3125	192Kb / 6P	DC-DC Converter, Relay Drive and

More results

Description similaire - 2SK3125

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	2SK3567	94Kb / 3P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
	2SK3562	232Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
	TPC8202	339Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
	2SK3569	150Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
	2SK3561	227Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
	TPC8002	514Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
	2SK3934	75Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
	2SK3761	89Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)
	2SK3407	230Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
	2SK3543	234Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

More results

2SK3125 Fiches technique(PDF) 4 Page - Toshiba Semiconductor

2SK3125 Fiches technique(HTML) 4 Page - Toshiba Semiconductor

Numéro de pièce similaire - 2SK3125

Description similaire - 2SK3125

Html Pages

1 2 3 4 5 6

Fiches technique Télécharger

Lien URL