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TPCS8211 Fiches technique(PDF) 6 Page - Toshiba Semiconductor |
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TPCS8211 Fiches technique(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page TPCS8211 2003-02-20 6 Drain-source voltage VDS (V) Pulse width tw (S) rth - tw 0.001 0.01 0.1 1 10 100 1000 Device mounted on a glass-epoxy board (a) (Note 2a) ① Single-device operation (Note 3a) ② Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) ③ Single-device operation (Note 3a) ④ Single-device value at dual operation (Note 3b) (1) 0.1 1 0.3 0.5 3 5 10 30 50 100 300 1000 500 (2) (3) (4) Single pulse 0.01 0.03 0.1 0.3 1 3 10 100 30 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 10 30 100 50 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (pulse) * 10 ms * 1 ms * VDSS max Single-device value at dual operation (Note 3b) Safe operating area |
Numéro de pièce similaire - TPCS8211 |
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Description similaire - TPCS8211 |
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